RUR040N02HZGTL

Rohm Semiconductor

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RUR040N02HZGTL

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Package:

TSMT3

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Description:

MOSFET N-CH 20V 4A TSMT3

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	680 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	35mOhm @ 4A, 4.5V
Supplier Device Package	TSMT3
Vgs(th) (Max) @ Id	1.3V @ 1mA
Drain to Source Voltage (Vdss)	20 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	700mW (Ta)
Package / Case	SC-96
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	RUR040