RQ6E080AJTCR

Rohm Semiconductor

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RQ6E080AJTCR

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Package:

TSMT6 (SC-95)

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Description:

MOSFET N-CH 30V 8A TSMT6

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1810 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.2 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	16.5mOhm @ 8A, 4.5V
Supplier Device Package	TSMT6 (SC-95)
Vgs(th) (Max) @ Id	1.5V @ 2mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	950mW (Ta)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	RQ6E080