RQ3E080BNTB

Rohm Semiconductor

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RQ3E080BNTB

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Package:

8-HSMT (3.2x3)

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Description:

MOSFET N-CH 30V 8A 8HSMT

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	15.2mOhm @ 8A, 10V
Supplier Device Package	8-HSMT (3.2x3)
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	2W (Ta)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RQ3E080