RJ1P12BBDTLL

Rohm Semiconductor

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RJ1P12BBDTLL

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Package:

LPTL

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Description:

MOSFET N-CH 100V 120A LPTL

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4170 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	5.8mOhm @ 50A, 10V
Supplier Device Package	LPTL
Vgs(th) (Max) @ Id	4V @ 2.5mA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	178W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	RJ1P12