RF4L040ATTCR

Rohm Semiconductor

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RF4L040ATTCR

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Package:

HUML2020L8

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Description:

PCH -60V -4A POWER, DFN2020, MOS

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17.3 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	89mOhm @ 4A, 10V
Supplier Device Package	HUML2020L8
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	2W (Ta)
Package / Case	6-PowerUDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RF4L040