RDN100N20FU6
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RDN100N20FU6

Rohm Semiconductor

Product No:

RDN100N20FU6

Manufacturer:

Rohm Semiconductor

Package:

TO-220FN

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 200V 10A TO220FN

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 543 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 360mOhm @ 5A, 10V
Supplier Device Package TO-220FN
Vgs(th) (Max) @ Id 4V @ 1mA
Drain to Source Voltage (Vdss) 200 V
Series -
Power Dissipation (Max) 35W (Tc)
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number RDN100