RD3S100CNTL1

Rohm Semiconductor

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RD3S100CNTL1

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Package:

TO-252

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Description:

MOSFET N-CH 190V 10A TO252

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	182mOhm @ 5A, 10V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	190 V
Series	-
Power Dissipation (Max)	85W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	RD3S100