QS5U17TR

Rohm Semiconductor

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QS5U17TR

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Package:

TSMT5

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Description:

MOSFET N-CH 30V 2A TSMT5

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Operating Temperature	150°C (TJ)
FET Feature	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds	175 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.9 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	100mOhm @ 2A, 4.5V
Supplier Device Package	TSMT5
Vgs(th) (Max) @ Id	1.5V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	900mW (Ta)
Package / Case	SOT-23-5 Thin, TSOT-23-5
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	QS5U17