IPI65R660CFD
Infineon Technologies
Product No:
IPI65R660CFD
Manufacturer:
Package:
PG-TO262-3-1
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : 10483
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
424
$0.6745
$285.988
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
| Supplier Device Package | PG-TO262-3-1 |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Drain to Source Voltage (Vdss) | 650 V |
| Series | CoolMOS™ |
| Power Dissipation (Max) | 62.5W (Tc) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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