VS-3C20ET07T-M3

Vishay General Semiconductor - Diodes Division

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VS-3C20ET07T-M3

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Forfait:

TO-220AC

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Description:

650 V POWER SIC GEN 3 MERGED PIN

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En stock : 986

Minimum: 1 Multiples: 1

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	845pF @ 1V, 1MHz
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-220AC
Current - Reverse Leakage @ Vr	100 µA @ 650 V
Series	-
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 20 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io)	20A
Operating Temperature - Junction	-55°C ~ 175°C