TP44100SG

Tagore Technology

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TP44100SG

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Forfait:

22-QFN (5x7)

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Description:

GAN FET HEMT 650V .09OHM 22QFN

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En stock : 2999

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	110 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 6 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	90mOhm @ 500mA, 6V
Supplier Device Package	22-QFN (5x7)
Vgs(th) (Max) @ Id	1.7V @ 11mA (Typ)
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	-
Package / Case	22-PowerVFQFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	13.5A (Tc)
Mfr	Tagore Technology
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	0V, 6V
Package	Tape & Reel (TR)
Base Product Number	TP44100