STW65N65DM2AG

STMicroelectronics

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STW65N65DM2AG

Fabricant:

Forfait:

TO-247-3

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Description:

MOSFET N-CH 650V 60A TO247

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En stock : 481

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	50mOhm @ 30A, 10V
Supplier Device Package	TO-247-3
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	Automotive, AEC-Q101, MDmesh™ DM2
Power Dissipation (Max)	446W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STW65