STU8N80K5

STMicroelectronics

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STU8N80K5

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Forfait:

TO-251 (IPAK)

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Description:

MOSFET N-CH 800V 6A TO251

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En stock : 3000

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.5 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	950mOhm @ 3A, 10V
Supplier Device Package	TO-251 (IPAK)
Vgs(th) (Max) @ Id	5V @ 100µA
Drain to Source Voltage (Vdss)	800 V
Series	SuperMESH5™
Power Dissipation (Max)	110W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STU8N80