STU3N62K3

STMicroelectronics

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STU3N62K3

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Forfait:

I-PAK

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Description:

MOSFET N-CH 620V 2.7A IPAK

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En stock : 55

Minimum: 1 Multiples: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	385 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.5Ohm @ 1.4A, 10V
Supplier Device Package	I-PAK
Vgs(th) (Max) @ Id	4.5V @ 50µA
Drain to Source Voltage (Vdss)	620 V
Series	SuperMESH3™
Power Dissipation (Max)	45W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.7A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STU3N62