STP27N60M2-EP

STMicroelectronics

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STP27N60M2-EP

Fabricant:

Forfait:

TO-220

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Description:

MOSFET N-CH 600V 20A TO220

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En stock : 20

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1320 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	163mOhm @ 10A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	4.75V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	MDmesh™ M2-EP
Power Dissipation (Max)	170W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STP27N