STI18N65M5

STMicroelectronics

Produit non:

STI18N65M5

Fabricant:

Forfait:

I2PAK

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Fiche technique:

Description:

MOSFET N CH 650V 15A I2PAK

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En stock : 348

Minimum: 1 Multiples: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1240 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	220mOhm @ 7.5A, 10V
Supplier Device Package	I2PAK
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	MDmesh™ V
Power Dissipation (Max)	110W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STI18N