STH30N65DM6-7AG

STMicroelectronics

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STH30N65DM6-7AG

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Forfait:

H2PAK-7

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Description:

AUTOMOTIVE-GRADE N-CHANNEL 650 V

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En stock : 235

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	115mOhm @ 10A, 10V
Supplier Device Package	H2PAK-7
Vgs(th) (Max) @ Id	4.75V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	Automotive, AEC-Q101, MDmesh™ DM2
Power Dissipation (Max)	223W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)