STD11N60DM2

STMicroelectronics

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STD11N60DM2

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Forfait:

DPAK

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Description:

MOSFET N-CH 650V 10A DPAK

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En stock : 2050

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	614 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.5 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	420mOhm @ 5A, 10V
Supplier Device Package	DPAK
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	MDmesh™ DM2
Power Dissipation (Max)	110W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	STD11