STB10N65K3

STMicroelectronics

Produit non:

STB10N65K3

Fabricant:

Forfait:

D²PAK (TO-263)

Lot:

Fiche technique:

Description:

MOSFET N-CH 650V 10A D2PAK

Quantité:

Livraison:

Paiement:

En stock : 901

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1180 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	1Ohm @ 3.6A, 10V
Supplier Device Package	D²PAK (TO-263)
Vgs(th) (Max) @ Id	4.5V @ 100µA
Drain to Source Voltage (Vdss)	650 V
Series	SuperMESH3™
Power Dissipation (Max)	150W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	STB10N6