SSM6N16FUTE85LF

Toshiba Semiconductor and Storage

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SSM6N16FUTE85LF

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US6

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Description:

MOSFET 2N-CH 20V 0.1A US6

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En stock : 3600

Minimum: 1 Multiples: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	9.3pF @ 3V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3Ohm @ 10mA, 4V
Supplier Device Package	US6
Vgs(th) (Max) @ Id	1.1V @ 100µA
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	200mW
Current - Continuous Drain (Id) @ 25°C	100mA
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel (TR)
Base Product Number	SSM6N16