SQ4425EY-T1_GE3

Vishay Siliconix

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SQ4425EY-T1_GE3

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Forfait:

8-SOIC

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Description:

MOSFET P-CHANNEL 30V 18A 8SOIC

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En stock : 35721

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3630 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	12mOhm @ 13A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	Automotive, AEC-Q101, TrenchFET®
Power Dissipation (Max)	6.8W (Tc)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQ4425