SQ3427EV-T1_GE3

Vishay Siliconix

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SQ3427EV-T1_GE3

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6-TSOP

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Description:

MOSFET P-CH 60V 5.3A 6TSOP

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En stock : 3282

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	95mOhm @ 4.5A, 10V
Supplier Device Package	6-TSOP
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	Automotive, AEC-Q101, TrenchFET®
Power Dissipation (Max)	5W (Tc)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQ3427