SQ2301ES-T1_GE3

Vishay Siliconix

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SQ2301ES-T1_GE3

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Forfait:

TO-236 (SOT-23)

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Description:

MOSFET P-CH 20V 3.9A TO236

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En stock : 4645

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TA)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	425 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	120mOhm @ 2.8A, 4.5V
Supplier Device Package	TO-236 (SOT-23)
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	Automotive, AEC-Q101, TrenchFET®
Power Dissipation (Max)	3W (Tc)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SQ2301