SISS76LDN-T1-GE3

Vishay Siliconix

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SISS76LDN-T1-GE3

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PowerPAK® 1212-8SH

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Description:

MOSFET N-CH 70V 19.6A/67.4A PPAK

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En stock : 2

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 35 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33.5 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	6.25mOhm @ 10A, 4.5V
Supplier Device Package	PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id	1.6V @ 250µA
Drain to Source Voltage (Vdss)	70 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Package / Case	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19.6A (Ta), 67.4A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SISS76