SISS32DN-T1-GE3

Vishay Siliconix

Produit non:

SISS32DN-T1-GE3

Fabricant:

Forfait:

PowerPAK® 1212-8S

Lot:

Fiche technique:

Description:

MOSFET N-CH 80V 17.4A/63A PPAK

Quantité:

Livraison:

Paiement:

En stock : 16075

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1930 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	7.2mOhm @ 10A, 10V
Supplier Device Package	PowerPAK® 1212-8S
Vgs(th) (Max) @ Id	3.8V @ 250µA
Drain to Source Voltage (Vdss)	80 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Package / Case	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17.4A (Ta), 63A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISS32