SIS407DN-T1-GE3

Vishay Siliconix

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SIS407DN-T1-GE3

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PowerPAK® 1212-8

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Description:

MOSFET P-CH 20V 25A PPAK1212-8

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En stock : 58006

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2760 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	93.8 nC @ 8 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9.5mOhm @ 15.3A, 4.5V
Supplier Device Package	PowerPAK® 1212-8
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	TrenchFET®
Power Dissipation (Max)	3.6W (Ta), 33W (Tc)
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SIS407