SIR182DP-T1-RE3

Vishay Siliconix

Produit non:

SIR182DP-T1-RE3

Fabricant:

Forfait:

PowerPAK® SO-8

Lot:

Fiche technique:

Description:

MOSFET N-CH 60V 60A PPAK SO-8

Quantité:

Livraison:

Paiement:

En stock : 1963

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3250 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2.8mOhm @ 15A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	3.6V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	69.4W (Tc)
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIR182