SIR106DP-T1-RE3

Vishay Siliconix

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SIR106DP-T1-RE3

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PowerPAK® SO-8

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Description:

MOSFET N-CH 100V 16.1A PPAK

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En stock : 3804

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3610 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8mOhm @ 15A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	3.4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	3.2W (Ta), 83.3W (Tc)
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	16.1A (Ta), 65.8A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIR106