SIHP25N40D-GE3

Vishay Siliconix

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SIHP25N40D-GE3

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Forfait:

TO-220AB

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Description:

MOSFET N-CH 400V 25A TO220AB

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En stock : 1434

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1707 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	170mOhm @ 13A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	400 V
Series	-
Power Dissipation (Max)	278W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHP25