SIHG080N60E-GE3

Vishay Siliconix

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SIHG080N60E-GE3

Fabricant:

Forfait:

TO-247AC

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Fiche technique:

Description:

E SERIES POWER MOSFET TO-247AC,

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En stock : 325

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2557 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	80mOhm @ 17A, 10V
Supplier Device Package	TO-247AC
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	E
Power Dissipation (Max)	227W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube