SIHF12N60E-GE3

Vishay Siliconix

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SIHF12N60E-GE3

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Forfait:

TO-220 Full Pack

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Description:

MOSFET N-CH 600V 12A TO220

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En stock : 1113

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	937 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Supplier Device Package	TO-220 Full Pack
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	E
Power Dissipation (Max)	33W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	SIHF12