SIHD6N65E-GE3

Vishay Siliconix

Produit non:

SIHD6N65E-GE3

Fabricant:

Forfait:

TO-252AA

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Description:

MOSFET N-CH 650V 7A DPAK

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En stock : 2880

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	820 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Supplier Device Package	TO-252AA
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	78W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHD6