SIHA25N60EFL-GE3

Vishay Siliconix

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SIHA25N60EFL-GE3

Fabricant:

Forfait:

TO-220 Full Pack

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Description:

N-CHANNEL 600V

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En stock : 997

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2274 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	146mOhm @ 12.5A, 10V
Supplier Device Package	TO-220 Full Pack
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	E
Power Dissipation (Max)	39W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)