SI9407BDY-T1-E3

Vishay Siliconix

Produit non:

SI9407BDY-T1-E3

Fabricant:

Forfait:

8-SOIC

Lot:

Fiche technique:

Description:

MOSFET P-CH 60V 4.7A 8SO

Quantité:

Livraison:

Paiement:

En stock : 9708

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	120mOhm @ 3.2A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	TrenchFET®
Power Dissipation (Max)	5W (Tc)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI9407