SI8447DB-T2-E1

Vishay Siliconix

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SI8447DB-T2-E1

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Forfait:

6-Micro Foot™ (1.5x1)

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Description:

MOSFET P-CH 20V 11A 6MICRO FOOT

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En stock : 14

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	75mOhm @ 1A, 4.5V
Supplier Device Package	6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id	1.2V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	TrenchFET®
Power Dissipation (Max)	2.77W (Ta), 13W (Tc)
Package / Case	6-UFBGA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.7V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8447