SI7615CDN-T1-GE3

Vishay Siliconix

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SI7615CDN-T1-GE3

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PowerPAK® 1212-8

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Description:

MOSFET P-CH 20V 35A PPAK1212-8

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En stock : 4

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3860 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9mOhm @ 12A, 4.5V
Supplier Device Package	PowerPAK® 1212-8
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	TrenchFET® Gen III
Power Dissipation (Max)	33W (Tc)
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI7615