SI2312CDS-T1-GE3

Vishay Siliconix

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SI2312CDS-T1-GE3

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Forfait:

SOT-23-3 (TO-236)

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Description:

MOSFET N-CH 20V 6A SOT23-3

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En stock : 137104

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	865 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	31.8mOhm @ 5A, 4.5V
Supplier Device Package	SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	TrenchFET®
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI2312