SCTH90N65G2V-7

STMicroelectronics

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SCTH90N65G2V-7

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Forfait:

H2PAK-7

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Description:

SICFET N-CH 650V 90A H2PAK-7

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En stock : 67

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3300 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	26mOhm @ 50A, 18V
Supplier Device Package	H2PAK-7
Vgs(th) (Max) @ Id	5V @ 1mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	330W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)
Base Product Number	SCTH90