SCT055HU65G3AG

STMicroelectronics

Produit non:

SCT055HU65G3AG

Fabricant:

Forfait:

HU3PAK

Lot:

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Description:

AUTOMOTIVE-GRADE SILICON CARBIDE

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En stock : 47

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	721 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	72mOhm @ 15A, 18V
Supplier Device Package	HU3PAK
Vgs(th) (Max) @ Id	4.2V @ 1mA
Drain to Source Voltage (Vdss)	650 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	185W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tape & Reel (TR)
Base Product Number	SCT055