RJK0222DNS-00#J5
Renesas Electronics Corporation
Produit non:
RJK0222DNS-00#J5
Fabricant:
Forfait:
8-DFN (5x6)
Lot:
-
Fiche technique:
-
Description:
POWER FIELD-EFFECT TRANSISTOR
Quantité:
Livraison:
Paiement:
En stock : 340000
Minimum: 1 Multiples: 1
Qté
Prix unitaire
Prix Ext
262
$1.0925
$286.235
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Information sur le produit
Paramètre Info
Guide de l'utilisateur
| Operating Temperature | 150°C (TJ) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Configuration | 2 N-Channel (Half Bridge) |
| Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 7A, 10V |
| Supplier Device Package | 8-DFN (5x6) |
| Vgs(th) (Max) @ Id | - |
| Drain to Source Voltage (Vdss) | 25V |
| Series | - |
| Package / Case | 8-WDFN Exposed Pad |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 8W, 10W |
| Current - Continuous Drain (Id) @ 25°C | 14A, 16A |
| Mfr | Renesas Electronics America Inc |
| Package | Bulk |
| Base Product Number | RJK0222 |
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15,000 ㎡En stock Entrepôt
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