PSMN4R8-100PSEQ

Nexperia USA Inc.

Produit non:

PSMN4R8-100PSEQ

Fabricant:

Forfait:

TO-220AB

Lot:

Fiche technique:

Description:

MOSFET N-CH 100V 120A TO220AB

Quantité:

Livraison:

Paiement:

En stock : 5000

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	14400 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	278 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	5mOhm @ 25A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	405W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tj)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	PSMN4R8