PMPB07R3ENAX

Nexperia USA Inc.

Produit non:

PMPB07R3ENAX

Fabricant:

Forfait:

DFN2020M-6

Lot:

Fiche technique:

Description:

SMALL SIGNAL MOSFET FOR MOBILE

Quantité:

Livraison:

Paiement:

En stock : 3000

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	914 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.6mOhm @ 12A, 10V
Supplier Device Package	DFN2020M-6
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchMOS™
Power Dissipation (Max)	1.9W (Ta), 12.5W (Tc)
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)