NVMJST1D3N04CTXG

onsemi

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NVMJST1D3N04CTXG

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10-TCPAK

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Description:

TRENCH 6 40V LFPAK 5X7

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En stock : 3000

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.39mOhm @ 50A, 10V
Supplier Device Package	10-TCPAK
Vgs(th) (Max) @ Id	3.5V @ 170µA
Drain to Source Voltage (Vdss)	40 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	375W (Tc)
Package / Case	10-PowerLSOP (0.209", 5.30mm Width) Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	386A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	NVMJST1D