NVD5C688NLT4G

onsemi

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NVD5C688NLT4G

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DPAK

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Description:

MOSFET N-CHANNEL 60V 17A DPAK

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En stock : 5

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.4 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	27.4mOhm @ 10A, 10V
Supplier Device Package	DPAK
Vgs(th) (Max) @ Id	2.1V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	18W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Mfr	onsemi
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NVD5C688