NVBG015N065SC1

onsemi

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NVBG015N065SC1

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Forfait:

D2PAK-7

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Description:

SIC MOS D2PAK-7L 650V

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En stock : 800

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4689 pF @ 325 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	283 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	18mOhm @ 75A, 18V
Supplier Device Package	D2PAK-7
Vgs(th) (Max) @ Id	4.3V @ 25mA
Drain to Source Voltage (Vdss)	650 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	500W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	145A (Tc)
Mfr	onsemi
Vgs (Max)	+22V, -8V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tape & Reel (TR)