NTTFS3D7N06HLTWG

onsemi

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NTTFS3D7N06HLTWG

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Forfait:

8-PQFN (3.3x3.3)

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Description:

MOSFET N-CH 60V 16A/103A 8PQFN

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En stock : 9000

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2383 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32.7 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.9mOhm @ 23A, 10V
Supplier Device Package	8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id	2V @ 120µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	2.2W (Ta), 83W (Tc)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 103A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NTTFS3