NTMS4807NR2G

onsemi

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NTMS4807NR2G

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Forfait:

8-SOIC

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Description:

MOSFET N-CH 30V 9.1A 8SOIC

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En stock : 2490

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 24 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	6.1mOhm @ 14.8A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	860mW (Ta)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9.1A (Ta)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NTMS4807