NTBG025N065SC1

onsemi

Produit non:

NTBG025N065SC1

Fabricant:

Forfait:

D2PAK-7

Lot:

Fiche technique:

Description:

SILICON CARBIDE (SIC) MOSFET - 1

Quantité:

Livraison:

Paiement:

En stock : 1600

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3480 pF @ 325 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	164 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	28.5mOhm @ 45A, 18V
Supplier Device Package	D2PAK-7
Vgs(th) (Max) @ Id	4.3V @ 15.5mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	395W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	106A (Tc)
Mfr	onsemi
Vgs (Max)	+22V, -8V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tape & Reel (TR)
Base Product Number	NTBG025