MMIX1F180N25T

IXYS

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MMIX1F180N25T

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Forfait:

24-SMPD

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Description:

MOSFET N-CH 250V 132A 24SMPD

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En stock : 20

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	23800 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	364 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	13mOhm @ 90A, 10V
Supplier Device Package	24-SMPD
Vgs(th) (Max) @ Id	5V @ 8mA
Drain to Source Voltage (Vdss)	250 V
Series	GigaMOS™, HiPerFET™, TrenchT2™
Power Dissipation (Max)	570W (Tc)
Package / Case	24-PowerSMD, 21 Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	132A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	MMIX1F180