MCG55P02A-TP

Micro Commercial Co

Produit non:

MCG55P02A-TP

Fabricant:

Forfait:

DFN3333

Lot:

Fiche technique:

Description:

P-CHANNEL MOSFET, DFN3333

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Paiement:

En stock : 13800

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6358 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	149 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.3mOhm @ 15A, 4.5V
Supplier Device Package	DFN3333
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	3.2W (Ta), 38W (Tc)
Package / Case	8-VDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	55A
Mfr	Micro Commercial Co
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	MCG55P02